AOT262L/aob262l v ds i d (at v gs =10v) 140a r ds(on) (at v gs =10v) < 3.0m ? (< 2.8m ? ? ) r ds(on) (at v gs = 6v) < 3.2m ? (< 3.0m ? ? ) symbol v ds v gs i dm i as , i ar e as , e ar t j , t stg symbol t 10s steady-state steady-state r jc maximum junction-to-case c/w c/w maximum junction-to-ambient a d 0.35 60 0.45 power dissipation b p d w power dissipation a p dsm w t a =70c 333 1.3 t a =25c a t a =25c i dsm a t a =70c i d 140 110 t c =25c t c =100c avalanche energy l=0.1mh c mj avalanche current c 16 continuous drain current 661 20 a 115 the AOT262L/aob262l combines advanced trench mosfet technology with a low resistance package to provide extremely low r ds(on) .this device is ideal for boost converters and synchronous rectifiers for consumer, telecom, industrial power supplies and led backlighting. v maximum units parameter absolute maximum ratings t a =25c unless otherwise noted 60v units junction and storage temperature range -55 to 175 c thermal characteristics v 20 gate-source voltage drain-source voltage 60 maximum junction-to-ambient a c/w r ja 12 48 15 500 pulsed drain current c continuous drain current g parameter typ max t c =25c 2.1 167 t c =100c g d s to220 g s d d to-263 d 2 pa k d g s www.freescale.net.cn 1/6 60v n-channel mosfet general description features
symbol min typ max units bv dss 60 v v ds =60v, v gs =0v 1 t j =55c 5 i gss 100 na v gs(th) gate threshold voltage 2.2 2.7 3.2 v i d(on) 500 a 2.2 3 t j =125c 3.6 g fs 80 s v sd 0.65 1 v i s 140 a c iss 6500 8140 9800 pf c oss 830 1040 1350 pf c rss 25 32 55 pf r g 0.5 1 1.5 ? q g (10v) 75 95 115 nc q gs 30 nc q gd 5nc t d(on) 27 ns t r 22 ns t d(off) 47 ns t f 8ns t rr 21 30 39 ns q rr 130 185 240 nc 2.3 3 m ? 2.5 2 2.8 3.2 r ds(on) static drain-source on-resistance v gs =6v, i d =20a to220 v gs =6v, i d =20a to263 i dss a body diode reverse recovery time drain-source breakdown voltage on state drain current i d =250 a, v gs =0v v gs =10v, v ds =5v reverse transfer capacitance i f =20a, di/dt=500a/ s v gs =0v, v ds =30v, f=1mhz electrical characteristics (t j =25c unless otherwise noted) static parameters parameter conditions diode forward voltage v gs =10v, i d =20a to263 i s =1a,v gs =0v v ds =5v, i d =20a v ds =0v, v gs = 20v zero gate voltage drain current gate-body leakage current forward transconductance v ds =v gs i d =250 a v gs =10v, i d =20a to220 v gs =10v, v ds =30v, r l =1.5 ? , r gen =3 ? gate resistance v gs =0v, v ds =0v, f=1mhz turn-off fall time total gate charge v gs =10v, v ds =30v, i d =20a gate source charge gate drain charge switching parameters body diode reverse recovery charge i f =20a, di/dt=500a/ s maximum body-diode continuous current g input capacitance output capacitance turn-on delaytime dynamic parameters turn-on rise time turn-off delaytime a. the value of r ja is measured with the device mounted on 1in 2 fr-4 board with 2oz. copper, in a still air environment with t a =25c. the power dissipation p dsm is based on r ja and the maximum allowed junction temperature of 150c. the value in any given application depends on the user's specific board design, and the maximum temperature of 175c may be used if the pcb allows it. b. the power dissipation p d is based on t j(max) =175c, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. c. repetitive rating, pulse width limited by junction temperature t j(max) =175c. ratings are based on low frequency and duty cycles to keep initial t j =25c. d. the r ja is the sum of the thermal impedence from junction to case r jc and case to ambient. e. the static characteristics in figures 1 to 6 are obtained using <300 s pulses, duty cycle 0.5% max. f. these curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsi nk, assuming a maximum junction temperature of t j(max) =175c. the soa curve provides a single pulse rating. g. the maximum current rating is package limited. h. these tests are performed with the device mounted on 1 in 2 fr-4 board with 2oz. copper, in a still air environment with t a =25c. www.freescale.net.cn 2/6 AOT262L/aob262l 60v n-channel mosfet
typical electrical and thermal characteristic s 17 5 2 10 0 18 40 0 20 40 60 80 100 123456 v gs (volts) figure 2: transfer characteristics (note e) i d (a) 0 2 4 6 0 5 10 15 20 25 30 i d (a) figure 3: on-resistance vs. drain current and gate voltage (note e) r ds(on) (m ? ) 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 1.0e+00 1.0e+01 1.0e+02 0.0 0.2 0.4 0.6 0.8 1.0 1.2 v sd (volts) figure 6: body-diode characteristics (note e) i s (a) 25c 125c 0.8 1 1.2 1.4 1.6 1.8 2 2.2 0 25 50 75 100 125 150 175 200 temperature (c) figure 4: on-resistance vs. junction temperature (note e) normalized on-resistance v gs =6v i d =20a v gs =10v i d =20a 0 2 4 6 8 246810 v gs (volts) figure 5: on-resistance vs. gate-source voltage (note e) r ds(on) (m ? ) 25c 125c v ds =5v v gs =4.5v v gs =10v i d =20a 25c 125c 0 20 40 60 80 100 012345 v ds (volts) fig 1: on-region characteristics (note e) i d (a) 4.5v 4v 6v 10v vgs=3.5v www.freescale.net.cn 3/6 AOT262L/aob262l 60v n-channel mosfet
typical electrical and thermal characteristic s 17 5 2 10 0 18 40 0 2 4 6 8 10 0 102030405060708090100 q g (nc) figure 7: gate-charge characteristics v gs (volts) 0 2000 4000 6000 8000 10000 0 102030405060 v ds (volts) figure 8: capacitance characteristics capacitance (pf) c iss 200 300 400 500 600 0.001 0.01 0.1 1 10 pulse width (s) figure 10: single pulse power rating junction-to- case (note f) power (w) 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 pulse width (s) figure 11: normalized maximum transient thermal impedance (note f) z jc normalized transient thermal resistance c oss c r ss v ds =30v i d =20a single pulse d=t on /t t j,pk =t c +p dm .z jc .r jc t o n t p d in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse t j(max) =175c t c =25c 10 s 0.0 0.1 1.0 10.0 100.0 1000.0 0.01 0.1 1 10 100 v ds (volts) i d (amps) figure 9: maximum forward biased safe operating area (note f) 10 s 10ms 1ms dc r ds(on) limited t j(max) =175c t c =25c 1 00 s r jc =0.45c/w www.freescale.net.cn 4/6 AOT262L/aob262l 60v n-channel mosfet
typical electrical and thermal characteristic s 17 5 2 10 0 18 40 1 10 100 1000 0.001 0.1 10 1000 pulse width (s) figure 15: single pulse power rating junction-to- ambient (note h) power (w) 0.001 0.01 0.1 1 10 0.01 0.1 1 10 100 1000 pulse width (s) figure 16: normalized maximum transient thermal impedance (note h) z ja normalized transient thermal resistance single pulse d=t on /t t j,pk =t a +p dm .z ja .r ja t on t p d in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0 100 200 300 400 0 25 50 75 100 125 150 175 t case (c) figure 13: power de-rating (note f) power dissipation (w) 0 30 60 90 120 150 0 25 50 75 100 125 150 175 t case (c) figure 14: current de-rating (note f) current rating i d (a) t a =25c r ja =60c/w 10 100 1000 1 10 100 1000 time in avalanche, t a ( s) figure 12: single pulse avalanche capability (note c) i ar (a) peak avalanche current t a =25c t a =150c t a =100c t a =125c www.freescale.net.cn 5/6 AOT262L/aob262l 60v n-channel mosfet
- + vdc ig vds dut - + vdc vgs vgs 10v qg qgs qgd charge gate charge test circuit & waveform - + vdc dut vdd vgs vds vgs rl rg vgs vds 10% 90% resistive switching test circuit & waveforms tt r d(on) t on t d(off) t f t off vdd vgs id vgs rg dut - + vdc l vgs vds id vgs bv i unclamped inductive switching (uis) test circuit & waveforms ig vgs - + vdc dut l vds vgs vds isd isd diode recovery test circuit & waveforms vds - vds + i f ar dss 2 e = 1/2 li di/dt i rm rr vdd vdd q = - idt ar ar t rr www.freescale.net.cn 6/6 AOT262L/aob262l 60v n-channel mosfet
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